Electrical resistors – Incased – embedded – or housed – Element in insulation with outer metallic sheath
Patent
1983-09-08
1987-04-14
Edlow, Martin H.
Electrical resistors
Incased, embedded, or housed
Element in insulation with outer metallic sheath
357 25, 357 237, 357 4, 338 2, 73777, H01L 2984, H01L 2978
Patent
active
046582797
ABSTRACT:
Velocity saturated strain sensitive devices (13 and 14) can be formed of a layer of silicon on an insulating substrate (11) having a silicon conducting channel of a selected size and proper doping levels to allow carrier velocity saturation to occur therein at reasonable potentials applied across the conducting channel region (21, 24). When operated in velocity saturation or near thereto, a strain imposed on the device, corresponding to deformation of the substrate on which the device is formed, results in large changes in the voltage-current characteristics of the device. The large voltage-current changes occuring with strain effectively provide very high, non-linear gauge factors. Devices can be formed on an insulating substrate, such as sapphire, or can be prepared by diffusing an impurity of one conductivity type into a silicon substrate of the opposite conductivity type to form an isolated channel.
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Edlow Martin H.
Jackson, Jr. Jerome
Wisconsin Alumini Research Foundation
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