High-speed sense amplifier

Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude

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365208, G11C 1140

Patent

active

060811382

ABSTRACT:
When a sense amplifier enable signal EN is taken "H", NMOSs are turned ON so that the sense amplifier is activated. When a data signal Sda is taken "H" and a data signal Sdb is taken "L", a node NA goes "H" and a node NB goes "L". The potentials of the respective sources of the NMOSs, i.e., potential levels at nodes NC and ND are respectively independently varied according to respective currents carried by the data signals Sda and Sdb and their levels. Therefore, the potential level at the node ND is brought to a ground level and the potential level at the node NB is brought closer to the ground level. Correspondingly, the potential level at the node NA becomes higher. The potential level at the node NA is outputted to an output terminal OUTa through an inverter comprised of a PMOS and an NMOS. Similarly, the potential level at the node NB is outputted to an output terminal OUTB through another inverter comprised of a PMOS and an NMOS.

REFERENCES:
patent: 5391949 (1995-02-01), Vinal
patent: 5485430 (1996-01-01), McClure
patent: 5528545 (1996-06-01), Takahashi et al.
patent: 5568438 (1996-10-01), Penchuk
patent: 5604451 (1997-02-01), Sakata
patent: 5619467 (1997-04-01), Sim
patent: 5646905 (1997-07-01), Pogrebnoy
patent: 5668765 (1997-09-01), Ang
Susumu Kusaba, "Semiconductor Integrated Circuit Device" Japan Institute of Invention and Innovation Journal of Technical Discloser, Jan. 17, 1994 and English translation.

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