Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Patent
1994-10-07
1996-07-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
257472, 257473, H01L 27095, H01L 2947, H01L 29812, H01L 3107
Patent
active
055369677
ABSTRACT:
A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800.degree. C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then to effect the recrystallization of the semiconductor or the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self-alignment relative to the gate electrode.
REFERENCES:
patent: 4338616 (1982-07-01), Bol
patent: 4375643 (1983-03-01), Yeh et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 4960718 (1990-10-01), Aina
patent: 5182218 (1993-01-01), Fujihira
Journal of Applied Physics, vol. 36, No. 10, Oct. 1965, "Surface States and Barrier Height of Metal-Semiconductor Systems", A. M. Cowley & S. M. Sze, pp. 3212-3220.
Electrochemical Society, Inc., Princeton, New Jersey, "Thin Films Interdiffusion and Reactions", J. M. Poate et al., pp. 380, 425.
Clark S. V.
Crane Sara W.
Fujitsu Limited
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