Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-10-28
1996-07-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257 91, 257 99, 359 59, 359 88, H01L 3300
Patent
active
055369502
ABSTRACT:
A transistor panel used for active matrix display devices includes islands of single crystal silicon formed on a transparent quartz substrate and arranged in rows and columns, with an NMOS transistor formed in each island. Each transistor includes source, drain and channel regions and an isolated pixel reference voltage region. A silicon body tie connects the channel region to the pixel reference voltage region and acts as a current sink for unwanted carriers thereby greatly increasing the snapback voltage. A metallization extends to each transistor and is in contact with each reference voltage region to form a body tie buss. The portion of the body tie that overlaps the pixel electrode may be sized to provide a storage capacitor for improved display performance. The unique body tie design obviates the need for a separate light shield layer, provides a dramatically increased aperture ratio and is compatible with normal high temperature silicon processes.
REFERENCES:
patent: 5019002 (1991-05-01), Holmberg
patent: 5041823 (1991-08-01), Johnson et al.
patent: 5095304 (1992-03-01), Young
patent: 5110748 (1992-05-01), Sarma
patent: 5126865 (1992-06-01), Sarma
patent: 5162931 (1992-11-01), Holmberg
patent: 5168074 (1992-12-01), Sarma
patent: 5207749 (1993-04-01), Zavracky et al.
patent: 5256562 (1993-10-01), Vu et al.
patent: 5281840 (1994-01-01), Sarma
patent: 5286983 (1994-02-01), Sakamoto et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5434433 (1995-07-01), Takasu et al.
"Single Transistor Latch in SOI MOSFET's", by C. E. Chen, IEEE Electron Device Letters, vol. 9, No. 12, Dec. 1988, pp. 636-638.
"The flat panel's future", Kenneth I. Werner (contributing editor), IEEE Spectrum, Nov., 1993, pp. 18-29.
"P-70: A 6.3 Mpixel AMLCD", by R. Martin, et al, SID 93 Digest, pp. 704-707.
"LCDs Run Away with Military Flat Panel Market", by Sheila Galatowitsch, Defense Electronics, May 19993, pp. 25-31.
"A Revolution is in Store for Flat-Panel Displays", by Jack Shandle, Electronic Design, Apr. 1993, pp. 59-73.
"A 0.7-in. Fully Integrated Poly-Si CMOS LCD with Redundancy" by Hayashi, et al, Proceedings of the SID, vol. 32/4, 1991, pp. 297-300.
"5.7 Late-News Papers: Single-Crystal Silicon Transmissive AMLCD", J. P. Salerno, et al, SID 92 Digest, pp. 63-66, 1992.
"29.3: A High Aperture Ratio TFT-LCD with a Shield-Electrode Structure", by T. Ueda, et al, SID 93 Digest, pp. 739-742, 1993.
Liu Michael S.
Lo Ka-Lun
Sarma Kalluri R.
Bruns Gregory A.
Honeywell Inc.
Mintel William
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