Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-02-21
1998-02-17
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 71, 257 72, 257296, 257350, 257765, H01L 2904, H01L 31036, H01L 27108
Patent
active
057194084
ABSTRACT:
In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
REFERENCES:
patent: 4907861 (1990-03-01), Muto
patent: 5062690 (1991-11-01), Whetten
patent: 5097297 (1992-03-01), Nakagawa
Matsukawa Yuka
Matsumaru Haruo
Sasano Akira
Shirahashi Kazuo
Tanaka Yasuo
Hitachi , Ltd.
Ngo Ngan
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