Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-02-21
1998-02-17
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250251, H05H 504
Patent
active
057194033
ABSTRACT:
A method and apparatus for the direct current acceleration and scanning of ions of all species to energies as high as a few million electron volts (MeV). These method and apparatus have particular relevance for the controlled doping of semiconductor materials and flat panel display units. The apparatus employs high velocity neutral beams of dopant atoms to deliver atoms to the high voltage terminal where they are converted to positive ions having a low electric rigidity. This low electric rigidity makes possible a compact charge state analyzer prior to final positive ion acceleration together with compact electrostatic scanning of the ions for individual wafer implantation at MeV energies. This technology makes possible a compact implanter system.
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