Method for forming a flash memory by forming shallow and deep re

Details Method for forming a flash memory by forming shallow and deep re Method for forming a flash memory by forming shallow and deep re

1994-12-14

1996-10-29

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437154, H01L 218247

Patent

active

055696155

ABSTRACT:
A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 .mu.m or less and impurity regions 0.1 .mu.m or less in depth.

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"Fabrication of Submicrometer MOSFET's Using Gas Immersion Laser Doping (GILD) " IEEE Electron Device Letters, vol. EDL-7, No. 7, pp. 440-442.

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