Method of making bipolar junction transistor

Details Method of making bipolar junction transistor Method of making bipolar junction transistor

1995-02-01

1996-10-29

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437162, 437149, 437150, 257526, 257586, 257592, H01L 218222

Patent

active

055696139

ABSTRACT:
A structural configuration and fabrication process of a bipolar junction transistor (BJT) semiconductor device having improved current gain. The fabrication process provides a P-type heavily-doped region underneath a P-type lightly-doped base region. The P-type heavily-doped region underneath the P-type lightly-doped base region prevents electron carriers from escaping from beneath the base region of the transistor, helping the collection in a collector of electron carriers emitted by an emitter of the BJT.

REFERENCES:
patent: 4883772 (1989-11-01), Cleeves et al.
patent: 5034338 (1991-07-01), Neppl et al.
patent: 5039624 (1991-08-01), Kadota
patent: 5455188 (1995-10-01), Yang
patent: 5478760 (1995-12-01), Yang

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