Method of manufacturing a semiconductor device with double struc

Details Method of manufacturing a semiconductor device with double struc Method of manufacturing a semiconductor device with double struc

1995-05-17

1996-07-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 74, 437149, 148DIG85, H01L 21266

Patent

active

055366651

ABSTRACT:
A semiconductor device includes a p-type silicon substrate, a first well of p-type formed in a major surface of the silicon substrate, and a second well of n-type formed close to the first well in the major surface of the silicon substrate. A third well of p-type is formed inside the second well and, furthermore, a conductive layer including p-type impurities of higher concentration than that of the first well is formed as extending immediately below both the first well and the second well. In accordance with this structure, even if minority carriers are injected, they recombine and disappear in the conductive layer, so that the implantation of the carriers into the first well is prevented. As a result, various disadvantageous phenomena due to the injection of the minority carriers are prevented and a semiconductor device having a stable device characteristic and high integration density is provided.

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"Multilayered Well Formation for Sub-0.5 .mu.m CMOS Devices Utilizing High Energy Ion Implantation" Extended Abstracts of the 21st Conference on Solid State Devices and Materials, by Kiyonori Ohuyu et al., Tokyo, 1989.

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