Method for manufacturing semiconductor device with removable spa

Details Method for manufacturing semiconductor device with removable spa Method for manufacturing semiconductor device with removable spa

1994-09-28

1998-02-17

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 2184

Patent

active

057190658

ABSTRACT:
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

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patent: 5508209 (1996-04-01), Zhang et al.
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