Method for producing a field effect transistor with a gate reces

Details Method for producing a field effect transistor with a gate reces Method for producing a field effect transistor with a gate reces

1990-12-14

1994-11-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437912, 437981, H01L 21338, H01L 21306

Patent

active

053626770

ABSTRACT:
A field effect transistor has an active layer containing a multi-step recess that becomes narrower as it approaches the substrate. A gate electrode is produced at the deepest portion of the recess section. The transistor may be produced by successively selectively etching the active layer and an overlying semiconductor surface protection film to produce a multi-step configuration recess, depositing a gate electrode at the bottom of the recess, and depositing source and drain electrodes on the active layer.

REFERENCES:
patent: 4425573 (1984-01-01), Ristow
patent: 4517730 (1985-05-01), Meignant
patent: 4519127 (1985-05-01), Arai
patent: 4600932 (1986-07-01), Norris
patent: 4818724 (1989-04-01), Cetronio et al.
patent: 4832788 (1989-05-01), Nemiroff
Macksey "GaAs power Fet's Having the Gate Recess Narrower than the Gate", IEEE Electronic Device Letters, vol. EPL-7, No. 2, Feb 1986, pp. 69-70.
Furutsuka et al, "Improvement of . . . Simple Recess Structure", IEEE . . . Electron Devices, vol. ED-25, No. 6, 1978, pp. 563-566.
Yamamoto et al, "Light Emission . . . Power MESFET's", IEEE . . . Electron Devices, vol. ED-25, No. 6, 1978, pp. 567-573.

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