Method of fabricating single crystal silicon arrayed devices for

Details Method of fabricating single crystal silicon arrayed devices for Method of fabricating single crystal silicon arrayed devices for

1994-04-08

1994-11-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 51, 437 86, 437247, 437974, 148DIG150, H01L 2120

Patent

active

053626710

ABSTRACT:
A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is than incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

REFERENCES:
patent: 3955190 (1976-05-01), Teraishi
patent: 4024626 (1977-05-01), Leupp et al.
patent: 4266223 (1981-05-01), Frame
patent: 4321747 (1982-03-01), Takemura et al.
patent: 4409724 (1983-10-01), Tasch, Jr. et al.
patent: 4597636 (1986-07-01), Hoshikawa
patent: 4644338 (1987-02-01), Aoki et al.
patent: 4653858 (1987-03-01), Szydlo et al.
patent: 4653862 (1987-03-01), Morozumi
patent: 4654117 (1987-03-01), Aoki et al.
patent: 4655551 (1987-04-01), Washizuka et al.
patent: 4655552 (1987-04-01), Togashi et al.
patent: 4660935 (1987-04-01), Iwashita et al.
patent: 4662719 (1987-05-01), Di Maria et al.
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4740782 (1988-04-01), Aoki et al.
patent: 4770498 (1988-09-01), Aoki et al.
patent: 4772943 (1988-09-01), Nakagawa et al.
patent: 4774205 (1988-09-01), Choi et al.
patent: 4782340 (1988-11-01), Czubatyj et al.
patent: 4807974 (1989-02-01), Hirai
patent: 4808983 (1989-02-01), Benjamin et al.
patent: 4810637 (1989-03-01), Szydlo et al.
patent: 4814830 (1989-03-01), Isohata et al.
patent: 4819038 (1989-04-01), Alt
patent: 4838654 (1989-06-01), Hamaguchi et al.
patent: 4838657 (1989-06-01), Miura et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4862153 (1989-08-01), Nakatani et al.
patent: 4870475 (1989-09-01), Endo et al.
patent: 4870486 (1989-09-01), Nakagawa et al.
patent: 4878086 (1989-10-01), Isohata et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 4917465 (1990-04-01), Conner et al.
patent: 4917468 (1990-04-01), Matsuhashi et al.
patent: 4930874 (1990-06-01), Mitsummune et al.
patent: 4935792 (1990-06-01), Tanaka et al.
patent: 4952031 (1990-08-01), Tsunoda et al.
patent: 4961629 (1990-10-01), Kato
patent: 4980308 (1990-12-01), Hayashi et al.
patent: 5013138 (1991-05-01), Roosen et al.
patent: 5020881 (1991-06-01), Matsuda et al.
patent: 5053765 (1991-10-01), Sonehara et al.
patent: 5054887 (1991-10-01), Kato
patent: 5056895 (1991-10-01), Kahn
patent: 5069534 (1991-12-01), Hirai
patent: 5073772 (1991-12-01), Takafuji et al.
patent: 5075674 (1991-12-01), Katayama et al.
patent: 5076543 (1991-12-01), Mandai
patent: 5076666 (1991-12-01), Katayama et al.
patent: 5087113 (1992-02-01), Sakono et al.
patent: 5099345 (1992-03-01), Kozaki et al.
patent: 5115232 (1992-05-01), Iizuka
patent: 5117298 (1992-05-01), Hirai
patent: 5256562 (1993-10-01), Vu et al.
patent: 5258325 (1993-11-01), Spitzer et al.
Sumiyoshi, Y. et al., Device Layer Transferred Poly SI TFT Array For High Resolution Liquid Crystal Projector, (1989) pp. 7.3.1-7.3.4.
Hamaguchi et al., Jpn. J. Appl. Phys., 23 (10):L815-L817 (Oct. 1984), Device Layer Transfer Tech. using Chemi-Mechanical Polishing.
Milnes, Solid-State Electronics, 29(2):99-121 (1986), Semiconductor heterojunction Topics: introduction and overview.
Akiyama et al., mat. Res. Soc. Symp. Proc., 67:53-64 (1986), Grow of GaAs on Si and its application to FETs and LEDs.
Ipri et al., Proc. of the SID, 29(2):167-171 (1988), A 600-650.degree. C. Polysilicon CMOS Process for Fabricating Fully Scanned active-matrix LCDs.
Fujii et al., IEEE Trans. Electron Devices, 37(1):121-127 (Jan. 1990). A Laser-Recrystallization Technique for Silicon TFT IC. on Quartz Sub. and Its appli. to Small-size Mo. Active-Ma. LCD's.
Takahashi et al., IEEE, pp. 147-148 (1990), Effects of Adhesive Properties on SDI devices obtained by Device transfer method.

Affiliated with

Also associated with

Rating

Method of fabricating single crystal silicon arrayed devices for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating single crystal silicon arrayed devices for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating single crystal silicon arrayed devices for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1782213