Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1995-03-17

1998-02-17

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

057187690

ABSTRACT:
In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness is plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.

REFERENCES:
patent: 4915978 (1990-04-01), Von Campe et al.
patent: 4958591 (1990-09-01), Yamazaki
patent: 5175021 (1992-12-01), Bonsaver et al.
patent: 5370737 (1994-12-01), Mathis
patent: 5540781 (1996-07-01), Yamagami et al.
H. Curtins, et al. "Influence of Plasma Excitation Frequency for a-Si:H Thin Film Deposition", Plasma Chemistry and Plasma Processing, vol. 7, pp. 267-273 (1987).

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