Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1979-09-17
1982-02-23
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307458, 307477, 357 22, 357 23, 357 43, 357 50, 357 15, 357 92, H01L 2704, H03K 19091
Patent
active
043171273
ABSTRACT:
A static induction type semiconductor device containing a normal type static induction transistor having the structure that a source region, gate regions and drain regions are arrayed in a main surface of a channel-constituting semiconductor region, and that a sub-drain region is formed in the opposite surface of the channel-constituting semiconductor region so as to extend from a position corresponding to the source region up to a position corresponding to the drain regions. The provision of this sub-drain region makes it possible to realize easy isolation of a normal vertical structure static induction transistor in a semiconductor wafer, the normal vertical structure contributing to increasing the transconductance, and to improving the speed of operation, without sacrificing a high packing density.
REFERENCES:
patent: 4032962 (1977-06-01), Balyoz et al.
patent: 4160918 (1977-12-01), Nazarian et al.
Nishizawa et al, Japanese J. of Applied Physics, vol. 16, supplement 16-1, pp. 151-154, (1977).
Larkins William D.
Zaidan Hojin Handotai Kenkyu Shinkokai
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