1988-04-29
1990-02-27
Hille, Rolf
357 2, H01L 2354, H01L 2904, H01L 2912
Patent
active
049050729
ABSTRACT:
A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
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Hirai Yutaka
Komatsu Toshiyuki
Nakagawa Katsumi
Nakagiri Takashi
Omata Satoshi
Canon Kabushiki Kaisha
Clark S. V.
Hille Rolf
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