Power semiconductor package having improved durability

Details Power semiconductor package having improved durability Power semiconductor package having improved durability

1993-04-19

1995-10-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257706, 361719, H01L 2302

Patent

active

054632510

ABSTRACT:
There is disclosed a semiconductor device wherein a mounting substrate (3) including an insulating layer and a pattern electrode selectively provided on the insulating layer is mounted on a heat sink (6) having a major surface. A plurality of copper supports (2) each having a surface forming an angle of substantially not more than 90.degree. with the major surface of the heat sink (6) are provided on the mounting substrate (3) such that the respective surfaces are not opposed to each other, and each of the supports (2) supports a semiconductor body (1). The semiconductor bodies (1) are connected to the pattern electrode with wires (9), and a portion enclosing at least the wires (9) is filled with a silicone gel (11). This permits the semiconductor device of large capacity to be reduced in size and to have an improved durability.

REFERENCES:
patent: 4204248 (1980-05-01), Proffit et al.
patent: 4514587 (1985-04-01), Van Dyk Soerewyn
patent: 4695872 (1987-09-01), Chatterjee
patent: 4855809 (1989-08-01), Malhi et al.
patent: 4956695 (1990-09-01), Robinson et al.
patent: 5025306 (1991-06-01), Johnson et al.
patent: 5170325 (1992-12-01), Bentz et al.
patent: 5173766 (1992-12-01), Long et al.
patent: 5239199 (1993-08-01), Chiu
Patent Abstracts of Japan, vol. 10, No. 263 (E-435), Sep. 9, 1986, JP-A 61-88547, May 6, 1986.

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