Thin-film transistor

Details Thin-film transistor Thin-film transistor

1989-04-19

1990-02-27

Wojciechowicz, Edward J.

357 237, 357 54, 357 67, H01L 2978

Patent

active

049050664

ABSTRACT:
A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.

REFERENCES:
patent: 4531144 (1985-07-01), Holmberg

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