Process for manufacturing a semiconductor device using NH.sub.4

Details Process for manufacturing a semiconductor device using NH.sub.4 Process for manufacturing a semiconductor device using NH.sub.4

1994-04-22

1995-10-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437190, H01L 2144, H01L 2148

Patent

active

054628911

ABSTRACT:
If a resist pattern is formed on a titanium-based thin film, and a titanium-based thin film is etched with an NH.sub.4 OH--H.sub.2 O.sub.2 --H.sub.2 O-based etching solution with an ammonia concentration of 3% or less, irregularities on pattern faces due to etching can be eliminated, and the amount of side etching at the titanium thin film below the resist pattern ends can be suppressed to 1 .mu.m or less.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 4948755 (1990-08-01), Mo
patent: 5047367 (1991-09-01), Wei et al.
patent: 5053083 (1991-10-01), Sinton
patent: 5274482 (1993-12-01), Morita et al.
patent: 5298437 (1994-03-01), McFarlane et al.
patent: 5298458 (1994-03-01), Arikawa et al.

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