Semiconductor laser element and method for adjusting self-induce

Coherent light generators – Particular active media – Semiconductor

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372 46, H01S 318

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active

055925022

ABSTRACT:
A semiconductor laser element includes: a semiconductor laminated structure for emitting a laser light, including an active layer interposed between a first cladding layer of a first-conductivity type and a second cladding layer of a second-conductivity type, the first cladding layer and the semiconductor layer having lower refractive indices than that of the active layer; and a current light confining means including a stripe-shaped semiconductor layer of the second-conductivity type formed on a surface of the second cladding layer on a side opposite to the active layer, for confining a laser driving current and the laser light in a region of the active layer corresponding to the stripe-shaped semiconductor layer, wherein the refractive index of the first cladding layer is larger than that of the second cladding layer in the semiconductor laminated structure, and the semiconductor laminated structure includes at least one semiconductor layer of the first-conductivity type having a lower refractive index than that of the first cladding layer, disposed between the first cladding layer and the active layer.

REFERENCES:
patent: 4757510 (1988-07-01), Kaneno et al.
patent: 4941146 (1990-07-01), Kobayashi
patent: 5111470 (1992-05-01), Hosoba et al.
patent: 5355384 (1994-10-01), Inoue et al.
patent: 5386429 (1995-01-01), Naito et al.

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