Integrated circuit structure and method for making same

Details Integrated circuit structure and method for making same Integrated circuit structure and method for making same

1977-04-28

1978-10-10

Wojciechowicz, Edward J.

357 23, 357 41, H01L 2712

Patent

active

041199928

ABSTRACT:
The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.

REFERENCES:
patent: 3852563 (1974-12-01), Bohorquez et al.
patent: 3872359 (1975-03-01), Feuersanger
patent: 3872492 (1975-03-01), Robbins
patent: 3933529 (1976-01-01), Goser

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