Method for forming a guarded Schottky barrier diode by ion-impla

Details Method for forming a guarded Schottky barrier diode by ion-impla Method for forming a guarded Schottky barrier diode by ion-impla

1977-08-11

1978-10-10

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 15, 357 52, 357 91, H01L 21265

Patent

active

041194462

ABSTRACT:
An improved method for forming a guard ring Schottky barrier diode using ion implantation. Diodes formed in accordance with this method require less area but exhibit breakdown voltage comparable to known prior art guarded Schottky barrier diodes. The method is especially applicable to the fabrication of monolithic integrated circuits.

REFERENCES:
patent: 3924320 (1975-12-01), Altman et al.
patent: 4060427 (1977-11-01), Barile et al.
patent: 4063964 (1977-12-01), Peressini et al.
Fang et al., "Making Ion-Implanted Self Aligned FET Using Silicide Met.", IBM-TDB, 14 (1972) 3687.
Buckley et al., ".... Pd.sub.2 Si Contacts on Single Xtal Si....", Solid State Electr., 15 (1972) 1331.
Battista et al., "Low Reverse Leakage Schottky Barrier Diode", IBM-TDB, 18 (1976) 3229.
Reith et al., "Al/PtSi SBD With a Diff. Barrier" IBM-TDB, 16 (1974) 3586.

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