Nonvolatile memory and method of programming the same

Static information storage and retrieval – Floating gate – Particular connection

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36518501, G11C11/34

Patent

active

059056746

ABSTRACT:
A nonvolatile memory cell includes a floating gate; a programming region, having a first current path to the floating gate, for programming by providing charge carriers to the floating gate through the first current path or extracting charge carriers stored in the floating gate; and a verification region, having a second current path separated from the first current path, for verifying the charge amount of the floating gate through the second current path during programming.

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