Semiconductor laser having reduced temperature dependence

Details Semiconductor laser having reduced temperature dependence Semiconductor laser having reduced temperature dependence

1991-12-20

1993-06-29

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 49, 372 34, 372 96, H01S 319

Patent

active

052241130

ABSTRACT:
In accordance with the present invention a semiconductor laser is provided with a cavity having decreasing loss with increasing wavelength in order to reduce temperature dependence. Such decreasing loss canbe obtained by providing the laser cavity with reflecting means or gratings which favor longer wavelengths. Decreasing loss can be provided, for example, by provision of appropriate multilayer reflection coatings or by longitudinal gratings. The coatings advantageously have peak reflectivity centered at the lasing wavelength corresponding to maximum operating temperature. The result in long wavelength InGaAs lasers is an improvement in the threshold temperature coefficient from about 50K to about 85K. In addition, the improved lasers exhibited a decreased rate of quantum efficiency degradation with temperature.

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg
patent: 4599729 (1986-07-01), Sasaki et al.
patent: 4745615 (1988-05-01), Kaneiwa et al.

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