Nonvolatile trench memory device and self-aligned method for mak

Details Nonvolatile trench memory device and self-aligned method for mak Nonvolatile trench memory device and self-aligned method for mak

1992-04-13

1993-07-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, H01L 21265, H01L 2170

Patent

active

052293122

ABSTRACT:
A nonvolatile trench memory device such as an EEPROM is made by a method which permits an extremely compact and simple configuration due to the use of precise and efficient self-alignment techniques. Oxide-capped polysilicon mesas, formed integrally with the control gates, form the word lines of the memory device, while drain metallization lines contact drain regions of the device and extend over the oxide-capped word lines to form the bit lines. The resulting device is extremely compact, since the self-aligned process permits tighter tolerances and the unique polysilicon mesa/oxide cap construction permits a more compact configuration.

REFERENCES:
patent: 5057896 (1991-10-01), Gotou
patent: 5065201 (1991-11-01), Yamachi
patent: 5072269 (1991-12-01), Hieda
patent: 5126807 (1992-06-01), Baba et al.

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