Technique for precision temperature measurements of a semiconduc

Details Technique for precision temperature measurements of a semiconduc Technique for precision temperature measurements of a semiconduc

1991-03-19

1993-11-02

Paschall, Mark H.

Electric heating

Heating devices

With power supply and voltage or current regulation or...

219502, 219494, 374123, 374161, H05B 102

Patent

active

052586022

ABSTRACT:
A method for sensitive and precise determination of the temperature of a thin layer or wafer of bandgap material, without requiring contact to the layer or to the wafer, is based on selection of optical wavelength or wavelengths and the measurements of transmittance through the sample at such wavelength(s). The relationship between the temperature variations of the absorption coefficient, whether determined by band-to-band absorption or a totally different mechanism, and the measured transmittance, provide an indication of the sample temperature, without regard to the ambient temperature. The method prescribes how to select the wavelength(s) based both on the intrinsic properties of the material and on the practical considerations of the measurement situation.

REFERENCES:
patent: 3672221 (1972-06-01), Weil
patent: 4302970 (1981-12-01), Snitzer et al.
patent: 4890933 (1990-01-01), Amith et al.
patent: 5098199 (1992-03-01), Amith

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