Semiconductor device with heterojunction of Al.sub.x Ga.sub.1-x

Details Semiconductor device with heterojunction of Al.sub.x Ga.sub.1-x Semiconductor device with heterojunction of Al.sub.x Ga.sub.1-x

1980-11-21

1984-03-27

Edlow, Martin H.

357 4, 357 16, H01L 3300

Patent

active

044397828

ABSTRACT:
The disclosure is directed to a semiconductor device comprising an active region between a pair of injecting/collecting layers, the active region comprising at least one layer of a first binary semiconductor material disposed between coupling barriers of a second different binary semiconductor material that is lattice matched to the first binary semiconductor material. In a preferred embodiment the active region comprises one or more layers of gallium arsenide separated by aluminum arsenide barrier layers.

REFERENCES:
patent: 4220960 (1980-09-01), Lui et al.
patent: 4257055 (1981-03-01), Hess
patent: 4270094 (1981-05-01), Holonyak, Jr.
patent: 4305048 (1981-12-01), Copeland
patent: 4309670 (1982-01-01), Burnham

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