Thin-film capacitors and process for manufacturing the same

Details Thin-film capacitors and process for manufacturing the same Thin-film capacitors and process for manufacturing the same

1990-08-30

1992-06-16

Griffin, Donald

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, H01G 410, H01G 700

Patent

active

051229234

ABSTRACT:
A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhemium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.

REFERENCES:
patent: 4903110 (1990-02-01), Aono
patent: 4981633 (1991-01-01), Alles et al.
patent: 4982309 (1991-01-01), Shepherd
I.B.M. Technical Disclosure Bulletin 357-51 Nov. 1974 vol. 17 No. 6 pp. 1569-1570.
I.B.M. Technical Disclosure Bulletin 357-51 Aug. 1980 vol. 23 No. 23 p. 1058.

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