Semiconductor component

Details Semiconductor component Semiconductor component

1987-09-18

1989-07-18

Larkins, William D.

357 55, 357 81, H01L 2974

Patent

active

048498009

ABSTRACT:
In a semiconductor component, which has various differently doped layers (2, 3, 4, 5) within a semiconductor substrate, an improvement of the electrical properties is achieved, wherein the thickness of the substrate in the current-carrying region is locally reduced by a deep etch well (10), the original mechanical stability of the semiconductor substrate largely remaining retained.

REFERENCES:
patent: 3553536 (1971-01-01), Neilson
patent: 3769563 (1973-10-01), Kirishins et al.
Patent Abstracts of Japan, vol. 5, No. 141 (E-73) (813) Sep. 5, 1981 & JP A 5676568 (Mitsubishi Denki K.K.) Jun. 24, 1981.

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