MOS control thyristor

Details MOS control thyristor MOS control thyristor

1991-02-22

1992-06-16

Prenty, Mark

357 234, H01L 2974, H01L 2910

Patent

active

051228548

ABSTRACT:
A MOS control thyristor comprising a first region of a first conductivity type doped with a first impurity having a first concentration, a second region of a second conductivity type provided on the first region and doped with a second impurity having a second concentration which is lower than the first concentration, and a third region of the first conductivity type selectively formed in the surface of the second region. A fourth region of the second conductivity type is selectively formed in the surface of the third region, a fifth region of the second conductivity type is selectively formed so that it protrudes through the fourth region into the third region, and a sixth region of the first conductivity type is selectively formed so that it is in contact with the fifth region. The impurity dose amount in the third region is within the range 1.times.10.sup.13 cm.sup.-2 to 7.times.10.sup.14 cm.sup.-2, and the impurity concentration in the third region is within the range 1.25.times.10.sup.16 cm.sup.-3 to 8.75.times.10.sup.17 cm.sup.-3.

REFERENCES:
patent: 4315271 (1982-02-01), Roger
patent: 4631564 (1986-12-01), Neilssone et al.
patent: 4646117 (1987-02-01), Temple
patent: 4821095 (1989-04-01), Temple
patent: 4851889 (1989-07-01), Matsuzaki
patent: 4857983 (1989-08-01), Baliga
patent: 4888627 (1989-12-01), Pattanayah et al.
patent: 4912541 (1990-03-01), Baliga

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