Non-volatile semiconductor memory with CVD tunnel oxide

Details Non-volatile semiconductor memory with CVD tunnel oxide Non-volatile semiconductor memory with CVD tunnel oxide

1988-09-07

1992-06-16

Jackson, Jr., Jerome

Fishing, trapping, and vermin destroying

357 6, 437238, H01L 2968, H01L 2994

Patent

active

051228475

ABSTRACT:
A non-volatile semiconductor memory device is comprised of a floating gate electrode disposed on and electrically insulated from a semiconductor substrate for storing electric charge. A tunnel insulating film is disposed in contact with the floating gate electrode to inject and extract the electric charge to and from the floating gate electrode in the form of an electric tunnel current flowing through the tunnel insulating film. The tunnel insulating film is composed of silicon oxide chemically-vapor-deposited at a temperature between 700.degree. C. and 900.degree. C. from the vapor mixture of dichlorosilane and dinitrogen monoxide on the order of 100 .ANG. thickness to thereby establish a breakdown current density more than 1.0 A/cm.sup.2.

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patent: 4535349 (1985-08-01), Weinberg
patent: 4688078 (1987-08-01), Hsieh
Sze, Semiconductor Devices, Physics and Technology Wiley, N.Y., N.Y. 30 Apr. 1985 pp. 357-358.
Kuiper et al "Interface Tech." pp. 116-120 Insul. Films on Semiconductors 1983 Elsevier, Holland.
Peek "The Character . . . , EEPROM" pp. 261-265 Insul. Films on Semiconductors 1983 Elsevier, Holland.
Ged et al "Highly Uniform . . . Etching" pp. 181-183 Insul. Films on Semi. 1983 Elsevier, Holland.

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