Method of producing semiconductor substrate having dielectric se

Details Method of producing semiconductor substrate having dielectric se Method of producing semiconductor substrate having dielectric se

1991-04-01

1993-06-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 67, 437247, 437927, 437981, 148DIG50, 148DIG73, 148DIG116, H01L 21302, H01L 21304, H01L 21306, H01L 2176

Patent

active

052234509

ABSTRACT:
A dielectric buried layer is formed inside substrates which are directly bonded together. Firstly, a groove or a recess, or both are formed on the principal bonding plane of one of at least two kinds of semiconductor substrates to be bonded together. Once the semiconductor substrates are bonded together, the groove and recess form a space, which is filled with dielectric. Before forming the dielectric buried layer, the invention carries out a process of removing potential damage from corners of the groove and/or recess.

REFERENCES:
patent: 4469568 (1984-09-01), Kato et al.
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4860081 (1989-08-01), Cogan
patent: 4908333 (1990-03-01), Shimokawa et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
patent: 4975350 (1990-12-01), Fujii et al.

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