Method for determining wafer cleanliness

Details Method for determining wafer cleanliness Method for determining wafer cleanliness

1992-02-19

1993-06-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437228, 437229, 437946, 134 2, 134 3, 156626, 156644, H01L 21302

Patent

active

052234436

ABSTRACT:
An embodiment of the present invention is a method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then having the resist removed under standard conditions. The method comprising the steps of: depositing a thin TEOS film over the entire surface of a wafer; exposing said wafer to a solution of hot potassium hydroxide (KOH) that attacks polysilicon and is highly selective to and does not etch said TEOS film, the exposing such that if any pin hole exists in the TEOS film an underlying layer of polysilicon is attacked vigorously; and inspecting said wafer for a visual indication in said polysilicon layer of whether or not said polysilicon layer was attacked by the exposure to said potassium hydroxide (KOH).

REFERENCES:
patent: 4473795 (1984-09-01), Wood
patent: 4514436 (1985-04-01), Moerschel
patent: 4599241 (1986-07-01), Nakaboh et al.

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