Method of forming an integrated circuit with pn-junction capacit

Details Method of forming an integrated circuit with pn-junction capacit Method of forming an integrated circuit with pn-junction capacit

1989-12-08

1991-10-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437 52, 437 60, 437 74, 437919, H01L 2170

Patent

active

050533525

ABSTRACT:
In a method of forming an integrated circuit array having a capacitance formed by a pn-junction and separated from other components by a pn-junction, semiconductor areas are provided which connect that zone of the two semiconductor zones forming the pn-junction of the capacitance that extends deeper into the semiconductor element than the other of the two semiconductor zones forming the pn-junction of the capacitance electrically to that zone of the two semiconductor zones forming the separating pn-junction that faces away from the capacitance.

REFERENCES:
patent: 3581164 (1971-05-01), Pfander
patent: 3584266 (1969-05-01), Schilling
patent: 3962718 (1976-06-01), Inoue et al.
patent: 3975818 (1976-08-01), Kaji et al.
patent: 4377029 (1983-05-01), Ozawa
patent: 4413401 (1983-08-01), Klein et al.
patent: 4507159 (1985-05-01), Erb
IBM Technical Disclosure Bulletin, vol. 21, No. 3 Aug. 1978 "High Capacitance Device".

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