Method of annealing a compound semiconductor substrate

Details Method of annealing a compound semiconductor substrate Method of annealing a compound semiconductor substrate

1986-09-19

1988-09-20

Ozaki, George T.

Fishing, trapping, and vermin destroying

437171, 437247, H01L 21318

Patent

active

047724897

ABSTRACT:
An annealing method for activating ion-implanted layers of a compound semiconductor substrate which comprises a step of converting gas containing prescribed components into plasma through an electron cyclotron resonance process and making the same read with a reactive gas to deposit reaction products onto the surface of the compound semiconductor substrate having the ion-implanted layers thereby forming a protective film; and a step of performing heat treatment for activating the ion-implanted layers. The gas converted into plasma through the electron cyclotron resonance process is N.sub.2, O.sub.2, NH.sub.3 or a gas mixture thereof, preferably NH.sub.3.

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