Single bipolar transistor memory cell and method

Details Single bipolar transistor memory cell and method Single bipolar transistor memory cell and method

1975-05-05

1977-01-11

Lynch, Michael J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307238, 307300, 307319, 307320, 357 14, 357 40, 357 51, H01L 2972

Patent

active

040030768

ABSTRACT:
Single bipolar transistor memory cell in which information is stored on the collector to substrate capacitance. This capacitance may be enhanced by an additional diffused region. Storage and retrieval of information is accomplished through only two leads connected to the transistor which is operated so that a portion of the base is fully depleted during a portion of the operating memory cycle of the memory cell.

REFERENCES:
patent: 3581164 (1971-05-01), Pfander et al.
patent: 3740731 (1973-06-01), Ohwada et al.
patent: 3740732 (1973-06-01), Frandon
patent: 3818463 (1974-06-01), Grundy
patent: 3876992 (1975-04-01), Pricer

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