Method of manufacturing an insulated gate field effect transisto

Details Method of manufacturing an insulated gate field effect transisto Method of manufacturing an insulated gate field effect transisto

1975-03-03

1977-01-11

Lynch, Michael J.

357 23, 357 52, 357 54, H01L 2702

Patent

active

040030717

ABSTRACT:
A method of manufacturing an insulated gate field effect transistor (hereinafter referred to as IGFET) of metal-insulating film-semiconductor construction in which a predetermined amount of impurity is introduced into the insulating film to produce immobile charges to thereby control the carrier concentration in the surface of the semiconductor and alter the conductivity type. A method developed from the above one for making an IGFET in which a transistor of depletion mode is coupled as a load with a transistor of enhancement mode.

REFERENCES:
patent: 3386163 (1968-06-01), Brennemann et al.
patent: 3417464 (1968-12-01), Fang et al.
patent: 3580745 (1971-05-01), Kool et al.
patent: 3696276 (1972-10-01), Boland
"Electronics," Oct. 26, 1970, p. 161.

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