Method of making a metal-gate MOS VLSI device

Details Method of making a metal-gate MOS VLSI device Method of making a metal-gate MOS VLSI device

1987-12-21

1989-10-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437913, 437984, 437947, 437 40, 148DIG20, H01L 21265, H01L 300

Patent

active

048747203

ABSTRACT:
A simplified process for metal gate and contact/interconnect systems for MOS VLSI devices employs a refractory metal structure for the gate, including a thick layer of tungsten alone, with stress and adhesion controlled by the deposition conditions. The metal gate receives sidewall oxide spacers during a metal-cladding operation for the source/drain areas. Contacts to the source/drain region include a molybdenum/tungsten stack and a top layer of gold.

REFERENCES:
patent: 3833842 (1974-09-01), Cunningham et al.
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4343082 (1982-08-01), Lepselter et al.
patent: 4532695 (1985-08-01), Schuermeyer
Gargini and Beinglass, "WOS: Low Resistance Self-Aligned Source, Drain and Gate Transistors", IEEE International Electron Devices Meeting (1981), pp. 54 through 57.
Miller and Beinglass, "CVD Tungsten Interconnect and Contact Barrier Technology for VLSI", Solid State Technology, Dec. 1982, p. 87, column 2.
Sangiorgi, Saraswat, Swanson and Dutton, "Accurate Barrier Modeling of Metal and Silicide Contacts", IEEE Electron Device Letters, May 1984, pp. 145 through 147.
Wolf, Stanley and Richard Tauber, Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, Ca., 1986, pp. 397-399.
Miller, Nicholas and Israel Beinglass, "Hot-Wall CVD Tungsten for VLSI", Solid State Technology, Dec. 1980, pp. 79-82.
Wilson, Richard W. and Lewis Terry, "Metallization Systems for Integrated Circuits", The Journal of Vacuum Science and Technology, vol. 7, No. 1, p. 142.
Wilson, Richard W. and Lewis Terry, "Metallization Systems for Silicon Integrated Circuits", Proceedings of the IEEE, vol. 57, No. 9, Sep. 1969, pp. 1580-1586.
P. A. Gargini, "Tungsten Barrier Eliminates VLSI Circuit Shorts", Vacuum Technology, Industrial Research & Development, Mar. 1983, pp. 141-147.
Miller, Nicholas and Israel Beinglass, "CVD Tungsten Interconnect and Contact Barrier Technology for VLSI", Solid State Technology, Dec. 1982, pp. 85-90.
Ghate et al., "Metallization in Microelectronics", Thin Solid Films, 45 (1977), 69-84.

Affiliated with

Also associated with

Rating

Method of making a metal-gate MOS VLSI device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a metal-gate MOS VLSI device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a metal-gate MOS VLSI device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1743476