Semiconductor device having supporting electrode composite struc

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357 66, 357 67, 357 81, H01L 2348, H01L 2940, H01L 2946, H01L 2962

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active

039697541

ABSTRACT:
A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed at least on one surface of the semiconductor substrate, in which the supporting electrode has such a composite structure that fibers having a coefficient of thermal expansion substantially equal to or lower than that of the semiconductor substrate are embedded in a matrix of a metal having electric and heat conductivities higher than those of the fibers. This supporting electrode has a satisfactorily high heat conductivity and the coefficient of thermal expansion thereof is freely adjustable.

REFERENCES:
patent: 3097329 (1963-07-01), Siemens
patent: 3128419 (1964-04-01), Waidkotter
patent: 3273029 (1966-09-01), Ross
patent: 3295089 (1966-12-01), Moore
patent: 3399331 (1968-08-01), Mutter et al.

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