Etching method for generating apertured openings or trenches in

Details Etching method for generating apertured openings or trenches in Etching method for generating apertured openings or trenches in

1988-05-13

1989-10-17

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412955, 20412965, 20412935, 20412975, C25F 312

Patent

active

048744840

ABSTRACT:
The present invention provides the production of apertured openings or trenches in layers or substrates composed of n-doped silicon proceeding in an electrolytic way, whereby the silicon is connected as a positively polarized electrode of an electrolysis cell containing an agent that contains hydrofluoric acid. Hole structures having highly variable cross-section can be reproducibly manufactured with the method of the invention and holes can be localized by prescribing nuclei. The invention can be used in the manufacture of trench cells in memory modules, insulating trenches in LSI semiconductor circuits, large-area capacitors (varicaps), and in contacting more deeply disposed layers in disconnectable and voltage-controlled thyristors.

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Nicky Chau-Chun Lu et al., A Substrate-Plate Trench-Capacitor (SPT) Memory Cell for Dynamic RAM's, IEEE Journal of Solid-State Circuits, vol. SC-21 No. 5, Oct. 1986.
T. Morie et al., Depletion Trench Capacitor Technology for Megabit Level MOS dRAM, IEEE Electron Device Letters, vol. EDL-4, No. 11, Nov. 1983, pp. 411-414.
H. J. Hoffmann et al., Photo-Enhanced Etching of n-Si, Appl. Phys. A 33, pp. 243-245 (1984).

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