Chemical vapor deposition of dielectric films containing Al, N,

Details Chemical vapor deposition of dielectric films containing Al, N, Chemical vapor deposition of dielectric films containing Al, N,

1975-08-25

1976-08-10

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 23, 357 41, 357 54, 423324, 423351, 427 82, 427 93, 427 94, 427 95, 427126, 427248, H01L 21318, H01L 2978

Patent

active

039740030

ABSTRACT:
Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500.degree. to about 1,300.degree. C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.

REFERENCES:
patent: 3306768 (1967-02-01), Peterson
patent: 3373051 (1968-03-01), Chu et al.
patent: 3475234 (1969-10-01), Kerwin et al.
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3540926 (1970-11-01), Rairden
patent: 3549411 (1970-12-01), Bean et al.
patent: 3600218 (1971-08-01), Pennebaker
patent: 3895390 (1975-07-01), Meiling et al.
Silvestri et al., "Chemical Vapor Deposition of Al.sub.x O.sub.y N.sub.2 Films" J. Electronic materials, vol. 4, No. 3, 1975, pp. 429-443.
Sterling et al., "Deposition of Insulating Coating . . . . . . " Chemical Abstracts, vol. 70, 1969, p. 355.

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