Method of depositing arsine, antimony and phosphine substitutes

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148DIG110, 148DIG65, 156613, 437 88, 437133, 437945, H01L 2120

Patent

active

049046160

ABSTRACT:
The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, M(CF.sub.2 CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy; and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.

REFERENCES:
patent: 2750541 (1956-06-01), Ohl
patent: 2787564 (1957-04-01), Shockley
patent: 2842466 (1958-07-01), Moyer
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4721683 (1988-01-01), Ward
patent: 4734514 (1988-03-01), Melas et al.
patent: 4800173 (1989-01-01), Kanai et al.
S. J. W. Price et al., "The Pyrolysis of Trimethylarsine", Canadian Journal Chemistry, vol. 48, (1970), pp. 3209-3212.
P. B. Ayscough et al., "Kinetics of the Pyrolysis of Trimethylarsine, Tristifluoromethylarsine and Related, Compounds; Journal of the Chemical Society", (1954), pp. 3381-3388.
G. R. A. Brandt et al., "Organometallic and Organometalloidal Fluorine Compounds Part V, Trifluoromethyl Compounds of Arsenic", Journal of Chemical Society, 1952, pp. 2552-2555.
H. J. Emeleus et al., "Organometallic and Organometalloidal Fluorine Compounds, Part VI, Trifluoromethyl Arsenicals", Journal of the Chemical Society, 1952, pp. 1552-1564.
F. W. Bennett et al., "Organometallic and Organometalloidal Fluorine Compounds, Part VII, Trifluoromethyl Compounds of Phosphorus", Journal of the Chemical Society, 1953, pp. 1565-1571.
W. R. Cullen, "Perfluoroalkyl Arsenicals, Part I The Preparation of Alkyl Perfluoralkyl Arsenicals", Canadian Journal of Chemistry, vol. 38, 1960, pp. 439-443.
W. R. Cullen, "Perfluoroalkyl Arsenicals, Part II The Preparation and Properties of Aryl Perfluoroalkyl Arsenicals", Canadian Journal of Chemistry, vol. 38, 1960, pp. 445-451.
M. J. Ludowise et al., "Use of Column V Alkyls in Organometallic Vapor Phase Epitaxy (OMVPE", SPIE, vol. 323, 1982, pp. 117-124.
M. J. Cherng et al., "GaAs.sub.1-x Sb.sub.x Growth by OMVPE", Journal of Electronic Materials, vol. 13, No. 5, 1984, pp. 799-813.
D. M. Speckman et al., "Alternatives of Arsine; The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic", Applied Physics Letter, vol. 50 (11) 3/16/87, pp. 676-678.
C. H. Chen et al., "Use of Tertiary Butyl Arsine for GaAs Growth", Applied Physics Letter, vol. 50(4), 1/26/87, pp. 218-220.
R. M. Lum et al., "Use of Tertiary Butyl Arsine in the Metal Organic Chemical Vapor Deposition Growth of GaAs", Applied Physics Letter, vol. 50(5), 2/2/87, pp. 284-286.
M. J. Cherny et al., "MOVPE Growth of GaInASSb", Journal of Crystal Growth 77, (1986), pp. 408-417.
G. J. Bougnot et al., "Growth of Ga.sub.1-x Al.sub.x Sb and Ga.sub.1-x In.sub.x Sb by Organometallic Chemical Vapor Deposition", Journal of Crystal Growth, pp. 392-399.
R. M. Biefield, "The Preparation of InAs.sub.1-x Sb.sub.x Alloys and Strained-Layer Super-Lattices by MOCVD", Journal of Crystal Growth 77, (1986), pp. 400-407.
James H. Comfort et al., "In-Situ Arsenic Doping of Epitaxial Silicon at 800.degree. C. by Plasma Enhanced Chemical Vapor Deposition", Applied Physics Letter, 51(9), 11/9/87, pp. 1536-1538.
Jacques S. Mercier, "Rapid Flow of Doped Glasses for VLSIC Fabrication", Solid State Technology, Jul. 1987, pp. 85-91.
R. M. Lum et al., "Investigation of Carbon Incorporation in GaAs Using .sup.13 C-Enriched Trimethylarsenic and .sup.13 CH.sub.4 ", Journal of Electronic Materials, vol. 17, No. 2 (1988), pp. 101-104.
R. M. Lum et al., "Investigation of Triethylarsenic as a Replacement for Arsine in the Metal-Organic Chemical Vapor Deposition of GaAs", Applied Physics Letter, vol. 52, (18), 5/2/88.
A. Tromson Carli et al., "Metal Organic Vapour Phase Epitaxy of GaAs; Raman Studies of Complexes Formation", Revue Physical Applications, vol. 20 (1985), pp. 569-574.
J. C. C. Tsai, "Diffusion", (Chapter 5), VLSI Technology, edited by SZE, pp. 169-217, (1983).
B. Swamira et al., "Diffusion of Arsenic in Polycrystalline Silicon", Applied Physic Letter, 40(a), May 1982, pp. 795-798.
T. Kook et al., "Diffusion of Dopants in (111) Silicon During High Temperature Heat Treatment in Nitrogen", Material Research Society Symposium Proc., vol. 36 (1985), pp. 83-88.
W. T. Tsang, "Chemical Beam Epitoxy of InGaAs", Journal of Applied Physics, 58(3), Aug. 1985, pp. 1415-1418.
H. Kroemer, "MBE Growth of GaAs on Si, Problems and Progress", Material Research Society Symposium Proceeding, (67), (1986), pp. 3-14.
W. T. Tsang, "Chemical Beam Epitoxy of InP and GaAs", Applied Physics Letter, vol. 45, No. 11, 12/1/84, pp. 1234-1236.
N. J. Mason, "Metal-Organic Vapour Phase Epitaxy", Chemistry of the Semiconductor Industry, pp. 140-155.
"Doping and Autodoping", VLSI Technology, pp. 56-61.
"Ion Implantation", Encyclopedia of Semiconductor Technology, pp. 397-410, John Wiley & Sons.
"Ion Implantation", Consise Encyclopedia of Chemical Technology, p. 666, John Wiley & Sons.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of depositing arsine, antimony and phosphine substitutes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing arsine, antimony and phosphine substitutes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing arsine, antimony and phosphine substitutes will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-174008

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.