Plasma etching reactor with reduced plasma potential

Details Plasma etching reactor with reduced plasma potential Plasma etching reactor with reduced plasma potential

1985-05-01

1986-07-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204298, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

046004645

ABSTRACT:
An improved plasma reactor for uniformly etching a large number of semiconductor wafers at a reduced plasma potential includes, in one embodiment, a grounded plate mounted intermediate the cathode and the top plate of a reactor chamber, the top plate and the chamber walls forming the reactor anode. The grounded plate is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate and the top plate, and the distance between the grounded plate and the cathode is large enough not to disturb the field in the proximity of the wafers being etched. The plate can be apertured to facilitate etchant gas flow. According to another embodiment of the invention at least two grounded plates are employed, spaced apart from each other and from the upper surface of the reactor plasma chamber.

REFERENCES:
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4307283 (1981-12-01), Zajac
patent: 4340461 (1982-07-01), Hendricks et al.
patent: 4349409 (1982-09-01), Shibayama et al.
patent: 4384938 (1983-05-01), Desilets et al.

Affiliated with

Also associated with

Rating

Plasma etching reactor with reduced plasma potential does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etching reactor with reduced plasma potential, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etching reactor with reduced plasma potential will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1739632