Formation of large grain polycrystalline films

Details Formation of large grain polycrystalline films Formation of large grain polycrystalline films

1988-11-25

1990-02-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 46, 148DIG132, H01L 21265

Patent

active

049046110

ABSTRACT:
A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.

REFERENCES:
patent: 4693759 (1987-09-01), Noguchi et al.

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