Variable capacitor with single depletion layer

Details Variable capacitor with single depletion layer Variable capacitor with single depletion layer

1981-12-17

1985-07-16

James, Andrew J.

357 15, 357 236, 357 38, 357 51, 357 55, H01L 2992

Patent

active

045299943

ABSTRACT:
A variable capacitor which comprises a capacity reading section including a capacity reading electrode which section is formed along a surface of a semiconductor crystal bulk having other sloping surfaces and at least one depletion layer control section including a control electrode which section is formed along the sloping surface. The thickness of a depletion layer within the bulk varies when the depletion layer control section is supplied with reverse bias voltage through the control electrode and the capacity variation then caused is read out at the capacity reading section.

REFERENCES:
patent: 2989650 (1961-06-01), Doucette et al.
patent: 2991371 (1961-07-01), LeHovec
patent: 3604990 (1971-09-01), Sigsbee
patent: 3849789 (1974-11-01), Corbes et al.
patent: 3893146 (1975-07-01), Heeren

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