Ceramic dielectric basis on bismuth-containing BaTiO.sub.3

Details Ceramic dielectric basis on bismuth-containing BaTiO.sub.3 Ceramic dielectric basis on bismuth-containing BaTiO.sub.3

1983-09-28

1985-03-05

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

501136, H01B 302, C04B 3546

Patent

active

045034826

ABSTRACT:
Ceramic dielectric based on bismuth-containing BaTiO.sub.3 in the form of a monophase mixed crystal-ceramic in which 0.02 to 0.12 mol of the layer perovskite PbBi.sub.4 Ti.sub.4 O.sub.15 or SrBi.sub.4 Ti.sub.4 O.sub.15 per mol of BaTiO.sub.3 are provided. On account of its comparatively low sintering temperature and in particular on account of the very small change of the value of the relative dielectric constant with applied direct voltage fields, the ceramic is particularly suitable for the manufacture of multilayer capacitors.

REFERENCES:
patent: 2369327 (1945-02-01), Wainer
patent: 3619744 (1971-11-01), Stephenson
patent: 3676351 (1972-07-01), Taki et al.
patent: 4017320 (1977-04-01), Fujiwara et al.

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