Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-05-28
1994-02-22
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257618, 257621, 257622, H01L 2974, H01L 2906, H01L 2940
Patent
active
052890198
ABSTRACT:
There is disclosed an IGBT which includes an n.sup.+ layer (2A) , an n.sup.- layer (2B) , a p well region (3), an n.sup.+ diffusion region (4), a gate oxide film (5), a gate electrode (6) and an emitter electrode (8) around the upper major surface of a p.sup.+ substrate (1), similarly to conventional IGBTS. In the lower major surface of the p.sup.+ substrate (1) is formed an n.sup.+ diffusion region (10) which is adapted not to reach the n.sup.+ layer (2A) . The n.sup.+ diffusion region (10) and p.sup.+ substrate (1) are connected to a collector electrode (9) . When there is a small potential difference between the emitter and collector electrodes, holes are injected from the p.sup.+ substrate into the n.sup.- layer to provide a low ON-resistance. When the potential difference is large, a depletion layer extending from the n.sup.+ diffusion region is brought into a reach-through state to limit an increase in the amount of injected holes. This prevents the device from being broken down due to an excessively increased current density.
REFERENCES:
patent: 4646117 (1987-02-01), Temple
patent: 5079602 (1992-01-01), Harada
Patent Abstracts of Japan, vol. 14, No. 244 (E-932) (4187), May 24, 1990, & JP-A-20-67-766, Mar. 7, 1990, Tadaharu Mimato, "Bipolar-Type Semiconductor Switching Device".
Patent Abstracts of Japan, vol. 14, No. 425 (E-977) (4368), Sep. 13, 1990, & JP-A-21-63-973, Jun. 25, 1990, Shinji Nishiura, "Insulated-Gate Type Bipolar Transistor".
Patent Abstracts of Japan, vol. 13, No. 301 (E-765) (3649), Jul. 11, 1989, & JP-A-1-80077, Mar. 24, 1989, Koichi Murakami, "Conductivity-Modulation MOSFET".
Patent Abstracts of Japan, vol. 11, No. 254 (E-533) (2701), Aug. 18, 1987, & JP-A-62-063-472, Mar. 20, 1987, Masaru Kubo, et al., "Power MOS-FET".
Fahmy Wael
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
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