1982-07-16
1985-03-05
Larkins, William D.
357 1, 357 2, 357 3, 357 4, 357 12, 357 231, 357 2315, 357 30, 357 57, 357 65, 357 68, 357 88, H01L 29161, H01L 2978, H01L 2712, H01L 2348
Patent
active
045034478
ABSTRACT:
A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.
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W. P. Dumke et al., "Heterostructure Long Lifetime Hot Electron Transistor" BM Technical Disclosure Bulletin, vol. 24 (1981) pp. 3229-3331.
Aucoin Thomas A.
Ferry David K.
Iafrate Gerald J.
Carroll J.
Goldberg Edward
Lane Anthony T.
Larkins William D.
Murray Jeremiah G.
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