Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si

Details Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si

1983-10-28

1985-07-16

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148DIG25, 148DIG72, 148DIG169, 156610, 156611, 156612, 156DIG64, 156DIG67, 156DIG103, H01L 21203, H01L 29165

Patent

active

045294550

ABSTRACT:
A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described.

REFERENCES:
patent: 3615855 (1971-10-01), Smith
patent: 4357183 (1982-11-01), Fan et al.
V. N. Vasilevskaya et al., "Structural Perfection of the Ge-Si and Si-Ge Heteroepitaxial Systems", Thin Solid Films, vol. 22, 1974, pp. 221-229.
E. Kasper et al., "A One-Dimensional SiGe Superlattice Grown by UHV Epitaxy", Applied Physics, vol. 8, 1975, pp. 199-205.
V. N. Vasilevskaja et al., "The Effect of Growth Conditions on the Structural and Electrical Properties of the Si-Ge Heteroepitaxial System", Thin Solid Films, vol. 30, 1975, pp. 91-98.
E. Kasper et al., "Elastic Strain and Misfit Dislocation Density in Si.sub.0.92 Ge.sub.0.08 Films on Silicon Substrates", Thin Solid Films, vol. 44, 1977, pp. 357-370.
V. N. Vasilevskaya et al., "The Structure and Electrical Characteristics of Si/Ge Heterojunctions-I: Imperfections in the Si-Ge Heteroepitaxial System Obtained by Deposition of Germanium From a Molecular Beam", Thin Solid Films, vol. 55, 1978, pp. 229-234.
B. Y. Tsaur et al., "Heteroepitaxy of Vacuum-Evaporated Ge Films on Single-Crystal Si", Applied Physics Letters, vol. 38, No. 10, May 15, 1981, pp. 779-781.
M. Garozzo et al., "Heteroepitaxial Growth of Ge on <111> Si by Vacuum Evaporation", Applied Physics Letters, vol. 41, No. 11, Dec. 1, 1982, pp. 1070-1072.
J. C. Bean et al., "Silicon MBE Apparatus for Uniform High-Rate Deposition on Standard Format Wafers", Journal of Vacuum Science Technology, vol. 20, No. 2, Feb. 1982, pp. 137-142.

Affiliated with

Also associated with

Rating

Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1734249