Semiconductor laser array with independently usable laser light

Details Semiconductor laser array with independently usable laser light Semiconductor laser array with independently usable laser light

1987-09-17

1989-05-23

James, Andrew J.

357 55, 357 16, 357 45, 357 60, H01L 3300

Patent

active

048335100

ABSTRACT:
A semiconductor laser array includes a pair of regions of an active layer for emitting laser lights being provided so as to produce a predetermined angle therebetween; the respective regions of the active layer being provided so as to have TE wave electric field vectors of different directions from each other in a plane vertical to the emitting direction of the output laser light. As such, laser light emitted from each of the active layer regions can be used independently without interference from the other.

REFERENCES:
patent: 3996492 (1976-12-01), McGroddy
patent: 4326176 (1982-04-01), Aiki et al.
patent: 4630279 (1986-12-01), Kasimura et al.
patent: 4667332 (1987-05-01), Mihashi et al.
patent: 4750184 (1988-06-01), Kumabe
Mihashi et al, "A Novel Self-Aligned AlGaAs Laser with Bent Active Layer Grown by MOCVD", IEDM, Dec. 1985, 646-49.
"Twin Beam Laser Diode for Optical Disk Memory", by R. Hattori et al., Mitsubishi Electric Corporation.

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