Method of producing a semiconductor device by simultaneous multi

Details Method of producing a semiconductor device by simultaneous multi Method of producing a semiconductor device by simultaneous multi

1981-04-08

1983-03-08

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 91, 427 531, H01L 21263, H01L 21265, H01L 2978

Patent

active

043759939

ABSTRACT:
A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a second laser being applied to the insulator layer to heat it while the first layer is applied to the semiconductor laser.

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